AO6409A 20v p-channel mosfet v ds -20v i d (at v gs =-4.5v) -5.5a r ds(on) (at v gs = -4.5v) < 41m w r ds(on) (at v gs = -2.5v) < 53m w r ds(on) (at v gs = -1.8v) < 65m w esd protected symbol v ds drain-source voltage -20 v the AO6409A uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is s uitable for use as a load switch applications. absolute maximum ratings t a =25c unless otherwise noted parameter maximum units s g d top view d d g d s d 1 2 3 6 5 4 v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl maximum junction-to-lead 37 45 c/w maximum junction-to-ambient a r q ja 48 60 c/w maximum junction-to-ambient a d 75 90 c/w junction and storage temperature range -55 to 150 c thermal characteristics parameter typ max units power dissipation b t a =25c p d 2.1 w t a =70c 1.3 continuous drain current t a =25c i d -5.5 a t a =70c -4 pulsed drain current c -30 drain-source voltage -20 v gate-source voltage 8 v general description features www.freescale.net.cn 1 / 5
symbol min typ max units bv dss -20 v v ds =-20v, v gs =0v -1 t j =55c -5 i gss 10 m a v gs(th) gate threshold voltage -0.3 -0.57 -0.9 v i d(on) -30 a 34 41 t j =125c 49 59 42 53 m w 52 65 m w g fs 20 s v sd -0.64 -1 v i s -2 a c iss 600 751 905 pf c oss 80 115 150 pf c rss 48 80 115 pf r g 6 13 20 w q g 7.4 9.3 11 nc q gs 0.8 1 1.2 nc q gd 1.3 2.2 3.1 nc t d(on) 13 ns t 9 ns turn-on delaytime v =-4.5v, v =-10v, r =1.8 w , turn-on rise time switching parameters total gate charge v gs =-4.5v, v ds =-10v, i d =-5.5a gate source charge gate drain charge gate resistance v gs =0v, v ds =0v, f=1mhz diode forward voltage i s =-1a,v gs =0v maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =-10v, f=1mhz output capacitance reverse transfer capacitance m w v gs =-2.5v, i d =-4a v gs =-1.8v, i d =-2a forward transconductance v ds =-5v, i d =-5.5a gate-body leakage current v ds =0v, v gs = 8v v ds =v gs , i d =-250 ma on state drain current v gs =-4.5v, v ds =-5v r ds(on) static drain-source on-resistance v gs =-4.5v, i d =-5.5a i dss zero gate voltage drain current m a electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =-250 m a, v gs =0v t r 9 ns t d(off) 19 ns t f 29 ns t rr 20 26 32 ns q rr 40 51 62 nc body diode reverse recovery charge i f =-5.5a, di/dt=500a/ m s v gs =-4.5v, v ds =-10v, r l =1.8 w , r gen =3 w turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =-5.5a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. AO6409A 20v p-channel mosfet www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics 0 3 6 9 12 15 0 0.5 1 1.5 2 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 20 30 40 50 60 70 80 0 2 4 6 8 10 r ds(on) (m w w w w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.80 1.00 1.20 1.40 1.60 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) 25 c 125 c v ds =-5v v gs =-1.8v v gs =-4.5v 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-1.5v -2.0v - 4.5v - 8v -2.5v -3.0v v gs =-2.5v i d =-5.5a, v gs =-4.5v i d =-5a, v gs =-2.5v i d =-4a, v gs =-1.8v voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 20 40 60 80 100 120 0 2 4 6 8 r ds(on) (m w w w w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-5.5a 25 c 125 c AO6409A 20v p-channel mosfet www.freescale.net.cn 3 / 5
typical electrical and thermal characteristics 0 1 2 3 4 5 0 2 4 6 8 10 12 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-10v i d =-5.5a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 100ms t j(max) =150 c t a =25 c ambient (note f) operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =90 c/w t on t p d AO6409A 20v p-channel mosfet www.freescale.net.cn 4 / 5
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v d u t l v gs isd d iode r e covery te st c ircuit & w aveform s vds - v ds + di/dt rr q = - idt t rr -isd f -i v dc d u t v dd vgs v ds v gs r l r g resistive switching test circuit & w aveform s - + vgs v ds t t t t t t 90% 10% r o n d(o ff) f o ff d(o n) ig v gs - + v d c isd di/dt r m v dd v dd -vds -i AO6409A 20v p-channel mosfet www.freescale.net.cn 5 / 5
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